Single electron memory characteristic of siliconnanodotnanowire transistor

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The authors have successfully fabricated an Si nanodot nanowire memory transistor using an inorganic SiO2 EB resist process for the formation of a 15 nm wide Si nanowire and an RTO process of an ultra-thin a-Si:H film for the ultra-small Si nanodot formation. In the fabricated Si nanodevice, a very large single electron charging effect, i.e. ΔVth of 0.72 V, is experimentally observed, and ΔVth of 2.2 V at 3 electrons is confirmed at room temperature. The developed technology may be useful for opening the way towards future Si nanodevices.