Single Crystalline GexSi1-x Compound Formation by Energetic Ge+-Ion Implantation into Silicon Wafers

Abstract

Single crystalline Si(111) samples were alloyedby a bombardment of both 60 and 200 keV energetic Ge+ ions. The implantation dose was variedbetween 1014 and 1017 cm-2. Rutherford backscattering and channeling analysis was applied in order to study the formation of a single crystalline Si–Ge alloy layer, both prior and after a thermal treatment at a temperature of 900 Ĉ. Thethickness and the depth of the implanted layer, as well as their composition and crystalline quality was determined, and it was found that a single crystalline Si–Ge alloy layer was created, with both depth and composition depending on the ion energy and the ion dose.