Formation of relaxed Si 1− xGe x layers on SIMOX by high-dose 74Ge ion implantation

Abstract

High dose 74Ge ion implantation into the Si surface layer of SIMOX structures has been employed to form strain-relieved Si 1− x Ge x layers on buried, amorphous SiO 2. The samples were investigated by Rutherford backscattering spectrometry, He + ion channeling and transmission electron microscopy. Ion implantation with an energy of 100 keV and a dose of 3 × 10 17 cm −2 at elevated substrate temperatures followed by rapid thermal annealing at 1290°C resulted in a single crystalline Si 0.74Ge 0.26 layer with a thickness of 1700 Å. The Ge concentration x of the newly formed Si 1− x Ge x layer can be chosen by using an appropriate implantation dose. Strain measurements by ion channeling confirmed complete strain relaxation of the Si 1− x Ge x layer after annealing.