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https://doi.org/10.1039/d1ce01715b
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Cite Journal: CrystEngComm |  Publication Date: Jan 1, 2022 |
 Citations: 8 |
Affiliation: University of Arkansas at Fayetteville
Molecular beam epitaxy (MBE) was used to grow dissimilar materials like cubic Ge on a hexagonal c-plane sapphire substrate. To the authors' best knowledge, this is the first time single crystalline Ge was grown on a c-plane sapphire substrate.
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