Abstract
The deposition of (0001) WS2 on c-plane (0001) sapphire substrates is implemented using a furnace chemical vapor deposition (CVD) system with WO3 powder and H2S gas precursors. The main carrier gas is Ar in the CVD system. The influence of sulfurization on the crystal orientation of WS2 is investigated by varying the gas flow rates of H2S (1∼5 sccm) and Ar (25∼125 sccm). In-plane X-ray diffraction patterns reveal the crystal orientation relationships of (0001) WS2 and c-plane sapphire substrates with different H2S and Ar conditions. The predominant orientation relationship of (0001) WS2 on c-plane sapphire is // under the conditions of low sulfurization rate (H2S/Ar:4%). The predominant orientation relationship converts from // to // with an increase in sulfurization rate. A high sulfurization rate (H2S/Ar:20%) equally promotes the nucleation and growth of WS2 on the sapphire substrate.
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