Single crystal titanium carbide, epitaxially grown on zincblend and wurtzite structures of silicon carbide

Abstract

Conditions for TiC epitaxial growth on 6Hα-SiC and β-SiC surfaces were established. The TiC epilayer defect structures and TiC/SiC interface properties were investigated in TiC/(0001)-6Hα-SiC, TiC/(111)-β-SiC and TiC/(110)-β-SiC structures. The TiC/SiC interfaces — annealed at 1300–1400 °C — remained flat and free of titanium silicides. Threading dislocations were the only defects observed in TiC epilayers grown on (0001) 6Hα-SiC. Microtwins and DPBs formed in TiC epilayers grown on (110) β-SiC were propagated only from similar defects present in the substrate.