Abstract
The liquid phase epitaxial (LPE) growth conditions for lattice‐matched and layers with various compositions and energy gaps were determined by using the x‐ray diffraction and photoluminescence measureements. The epitaxial layers were grown on (111)A and (100) substrates. By using these LPE growth conditions, the lattice‐matched epitaxial layers can be grown in the energy gap range from 0.8 to 1.44 eV. The Hall measurements of unintentionally doped layers which were grown without using special baking methods were performed at room temperature. The carrier concentration was , and the Hall mobility was 4549 and 4466 cm2/Vsec. The compositional grading in layers was studied by the rocking curves. It was found that the epitaxial layers with mirror surface were more easily obtained on (111)A than on (100) . The composition dependence of the growth rate of was studied. The possibility of obtaining heterostructures such as and was also studied.
Published Version
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