Single crystal growth of hexagonal SiC on cubic SiC by intentional polytype control

Abstract

Crystal growth of SiC on 3C-SiC(100) substrates has been carried out by using a sublimation method, utilizing the phase transformation from cubic 3C-SiC to hexagonal 6H-SiC at high temperatures. Polytype control in SiC growth on CVD-grown 3C-SiC(100) substrates was successfully achieved for the first time. The growth rate was several hundred microns per hour. The polytypes and crystallographic planes of the grown layers were examined using photoluminescence, Raman spectroscopy, X-ray diffraction and RHEED analyses. The polytypes of the grown layers change from cubic 3C modification to hexagonal 6H modification with increase in temperature. 6H-SiC with (01 1 4) planes can be grown on 3C-SiC(100). Ingots of 6H-SiC up to 15 mm in diameter and 6 mm in length were grown in 6 h. The grown mechanism of 6H-SiC on 3C-SiC substrates based on the experimental results is discussed.