Abstract
Recent achievements in crystal growth and homoepitaxy of SiC, mainly of the 4H polytype, have been discussed. Several growth techniques, such as seeded sublimation growth, high temperature chemical vapor deposition, sublimation epitaxy and liquid phase epitaxy have been utilized to develop technological procedures and understand the growth processes better. The advantages of either method have been stressed. The main target has been the reproducible growth of micropipe free substrate material and thick epitaxial layers for device applications. The purity of the layers has been of special interest. The results obtained are indicative for the massive progress that has been achieved in SiC crystal growth during recent years.
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