Abstract

The growth of sapphire filaments embedded in hot‐pressed alumina was studied at 1672°C. In undoped alumina, a constant growth rate of 1.17×10‐6 cm/s was observed. The initial growth rate into MgO‐doped alumina was 4.6×10‐8 cm/s, decreasing with increasing matrix grain size. Observed rates of boundary migration were larger than those of previously reported data.

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