Abstract
AbstractUntersucht wird das Wachstum von in heiß gepreßtes Al2O3 eingebetteten Sapphir‐Filamenten bei 1672°C. In undotiertem Al2O3 beträgt die Wachstumsgeschwindigkeit 1.17·10‐6 cm/s, in MgO‐dotiertem Al2O3 beträgt sie anfangs 4.6·10‐8 cm/s und nimmt mit wachsender Matrix‐Korngröße zu.
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