Single Atom Devices in Silicon and Germanium

Abstract

Summary form only given. Over the past decade we have developed a radical new strategy for the fabrication of atomic-scale devices in silicon and germanium [1-4]. Using this process we have demonstrated that Ohm''s Law survives to the atomic-scale [4,5] and the formation of all-epitaxial single electron transistors [6,7] down to the few electron limit. Most recently we have demonstrated a precision single atom transistor [8]. We will present atomic-scale images and electronic characteristics of these atomically precise deviceOver the past decade we have developed a radical new strategy for the fabrication of atomic-scale devices in silicon and germanium [1-4]. Using this process we have demonstrated that Ohm''s Law survives to the atomic-scale [4,5] and the formation of all-epitaxial single electron transistors [6,7] down to the few electron limit. Most recently we have demonstrated a precision single atom transistor [8]. We will present atomic-scale images and electronic characteristics of these atomically precise devices and demonstrate the impact of atomically abrupt vertical and lateral confinement on electron transport. We will also highlight some recent results towards single shot spin read-out of these precisely placed donors and present some of the challenges to achieving truly scalable donor based quantum computing architectures in silicon.