Abstract
Using a quantum dot in quantum well (QD-in-QW) active region, current injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) lasing simultaneously in blue and green were achieved at room temperature (RT). Lasing was first achieved at 545 nm with a threshold current of ∼2 μA, and with a further increase of current, another lasing peak at 430 nm came out with a threshold current of ∼5 mA. The energy difference between the two lasing peaks originating from QDs and QWs is 609 meV. According to the spontaneous emission spectra measured under different injected currents, a model of energy states in QD-in-QW is proposed to describe the distribution of carriers in this structure. Using this model, the evolution of emission intensity, shift of peak energy, variation of linewidth and the lasing characteristics can be well explained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
