Abstract
The feasibility of quantifying surface structures using the profile imaging technique in high-resolution electron microscopy has been considered using theoretical multi-slice simulations. The possibilities for observing surfaces with missing or additional atoms, or with reconstruction, have been investigated in detail, with reference to particular oxides (UO 2, TbO 2) and compound semiconductors (CdTe, GaAs). The influence of such factors as incident beam misalignment, accelerating voltage, objective lens defocus and crystal thickness on the apparent surface relaxation were also considered, together with the possibility of eliminating any artefacts by using a focal series restoration.
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