Abstract
A single-event burnout (SEB) reliability and hardening method for 1.7-kV 4H-SiC power VDMOSFET under high liner energy transfer (LET) value range is proposed and researched by the 2-D numerical simulation. Compared with the conventional VDMOSFET with N-type multi-buffer layers, the hardened VDMOSFET not only ensures that the forward conduction capability does not deteriorate, but also reduces the peak electric field under breakdown voltage from 3.62 MV/cm to 2.98 MV/cm. The advantage of the hardened structure is providing a hole leakage path and increasing the contact area between the source metal and the N+ source, eliminating the effect of electron-hole pairs generated by heavy ion strike on the device, thus improving the SEB performance significantly. In addition, this fabricating technology is compatible with the current technological processes. This hardened structure provides a great potential in aerospace application.
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