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Abstract
The breakdown characteristics of InGaAs/InP avalanche photodiodes (APDs) are investigated theoretically as a function of structural parameters of a guard ring. The difference between electric fields in the center and edge regions greatly increases with increasing distance (d) between the p+-InP contact and the floating guard ring. As a result, the edge breakdown can be reduced using a floating guard ring with d = 0.3–0.8 µm. However, we observe that the reduction effect of the breakdown voltage caused by the adjustment of the doping concentration or junction position is not large, compared with that by the distance d.
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