Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices

Abstract

The spin of an electron confined to a semiconductor quantum dot is one of the main technology platforms currently evaluated in the pursuit of qubit implementation. In this study, we developed and optimized a full simulation process flow used to model an Ultra-Thin Body and Buried oxide (UTBB) Fully Depleted Silicon-On-Insulator (FD-SOI) quantum dot device fabricated using STMicroelectronics' standard manufacturing process. Here, we report optical, geometrical, electrical, and quantum numerical results that allowed us to assess the device performance before its eventual fabrication.