Abstract
Fully Depleted Silicon on Insulator (FD-SOI) is one of the alternatives that permits today to follow the More Moore law of CMOS integration for the 28nm node and beyond, while still dealing with fully planar transistors. This talk will focus on the benefits of the 28nm FD-SOI CMOS technology from STMicroelectronics for analog/RF/millimeter-wave and high-speed mixed signal circuits, by taking full advantage of wide voltage range body biasing tuning. For each category of circuits (analog/RF, mmW and high-speed), concrete design examples are given in order to highlight the main design features specific to FD-SOI. A short focus will be made as well on the modelling of the specific aspects related to this Ultra Thin Body and Box (UTBB) FD-SOI technology and its implementation in the actual Design Platforms.
Published Version
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