Abstract
As today’s 28nm FDSOI (Fully Depleted Silicon On Insulator) technology is at the industrialization level, this paper aims to summarize the key advantages allowed by the thin BOX (Buried Oxide) of the FDSOI, through the technology evolution but also new opportunities, among logic applications and extending the possibilities offered by the platform. We will summarize how the advantages provided by the thin BOX have been first explored and developed, and how the back biasing techniques are the key to the outstanding performances provided by the FDSOI at low voltage. Then, as the FDSOI technology is also a solution to develop innovative platforms and applications, we will detail some opportunities. In particular, we will present monolithic 3D integration, ultra-low power devices for IoT (Internet of Things) and ultra-sensitive sensors.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
