Abstract
A design-topological solution for a tunnel field-effect transistor of a new type is proposed and the simulation of the transistor is performed. The device is a vertical ballistic field-effect transistor with a cylindrical metallic gate based on a cylindrical undoped AlxGa1–xAs quantum nanowire located in an Al2O3 matrix. For a given geometry of the device structure, the optimum of the fraction of aluminum in the semiconductor composition varying along the transistor channel is found, at which, unlike a conventional tunnel field-effect transistor, not only the complete suppression of the quantum barrier for electrons by a positive gate voltage is ensured, but also the minimum possible electrical resistance of the transistor channel. The current-voltage characteristics of the transistor are calculated within the framework of a rigorous quantum-mechanical description of the electron transport in its channel, taking into account the non-parabolic nature of the band structure of the semiconductor.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
