Abstract
We present a detailed analysis of low-frequency noise (LFN) measurements in vertical III-V nanowire tunnel field-effect transistors (TFETs), which help to understand the limiting factors of TFET operation. A comparison with LFN in vertical metal-oxide semiconductor field-effect transistors with the same channel material and gate oxide shows that the LFN in these TFETs is dominated by the gate oxide properties, which allowed us to optimize the TFET tunnel junction without deteriorating the noise performance. By carefully selecting the TFET heterostructure materials, we reduced the inverse subthreshold slope well below 60 mV/decade for a constant LFN level.
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