Abstract
This paper demonstrates the improvement of device linearity in AlGaN/GaN heterostructure field effect transistors (HFETs) using polarization Coulomb field (PCF) scattering and investigates the relationship between device linearity and PCF scattering under 10 and 20 V drain bias. The mobility of the gate-to-source region in AlGaN/GaN HFETs is calculated using the Monte Carlo method. We find that PCF scattering decreases with an increase in gate bias (from −3 to −0.5 V) under high field conditions, leading to lower gate-to-source resistance. Under 20 V drain bias, linearity is worse than under 10 V drain bias. The transconductance drop is significant in AlGaN/GaN HFETs, which damages linearity. By adopting an appropriate drain bias, PCF scattering can alleviate transconductance drop and improve the linearity of AlGaN/GaN HFETs.
Highlights
With the rapid development of high-volume multimedia traffic in wireless communication systems, power amplifiers (PAs) have become very important
Improving the linearity of AlGaN/GaN heterostructure field effect transistors (HFETs) would be an effective method to overcome the predicament of GaN PAs without the expense of power consumption, response time, and device integration
The transconductance manifests as a sharp drop after reaching a maximum as the gate bias increases in AlGaN/GaN HFETs, which has been reported in many research studies
Summary
With the rapid development of high-volume multimedia traffic in wireless communication systems, power amplifiers (PAs) have become very important. The transconductance (gm) manifests as a sharp drop after reaching a maximum as the gate bias increases in AlGaN/GaN HFETs, which has been reported in many research studies. This phenomenon originates from complex causes like traps, polar optical phonon scattering, self-heating, and so on. The Monte Carlo method is adopted to calculate the scattering rate under different drain biases Using this method, the real working state of the device can be better reflected, and the k space distribution of electrons can be obtained. The influence of the gate length on device linearity under high drain bias is restricted
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