Abstract
AlGaN/GaN heterostructure field-effect transistors (HFETs) with three kinds of gate lengths were fabricated, and the theory of polarization Coulomb field (PCF) scattering with the electron systems in the AlGaN/GaN HFETs was studied. There are two methods of analysis and calculation of the PCF scattering in AlGaN/GaN HFETs: one is by considering the 2-dimensional electronic gas (2DEG) of the gate-source, gate-drain, and gate regions as three independent electron systems and the other is by considering the 2DEG of the drain–source channel as a unified electron system. The calculation and analysis of the additional polarization charges underneath the gate region for the prepared AlGaN/GaN HFETs indicate that the theory of PCF scattering in AlGaN/GaN HFETs with three independent electron systems is more accurate.
Highlights
AlGaN/GaN heterostructure field-effect transistors (HFETs) have the advantages of high electron mobility and high breakdown voltage, which make them suitable for a broad range of microwave power applications.[1,2,3,4,5] The frequency and power performance of HFETs is directly related to the carrier drift velocity of the drain–source channel, which is determined by the carrier scattering mechanism
Luan et al initially established the theoretical model of polarization Coulomb field (PCF) scattering in AlGaN/GaN HFETs, but they considered only the PCF scattering with the single electron system of the gate-region 2-dimensional electronic gas (2DEG).[10]
The polarization charges in the gate-source and gate-drain regions are not affected by the gate biases, remaining at ρ0.11 The calculation of the electron energy state in the heterostructure triangular potential well of AlGaN/GaN HFETs is based on the uniformly distributed strain polarization charge such that the difference between the nonuniformly distributed and the uniformly distributed strain polarization charge density of the barrier layer forms a perturbation potential and generates elastic scattering among the 2DEG in the triangular potential well
Summary
AlGaN/GaN heterostructure field-effect transistors (HFETs) have the advantages of high electron mobility and high breakdown voltage, which make them suitable for a broad range of microwave power applications.[1,2,3,4,5] The frequency and power performance of HFETs is directly related to the carrier drift velocity of the drain–source channel, which is determined by the carrier scattering mechanism. The important scattering mechanisms of AlGaN/GaN HFETs have polar optical phonon (POP) scattering, polarized Coulomb field (PCF) scattering, acoustic phonon (AP) scattering, interface roughness (IFR) scattering, and dislocation (DIS) scattering.[6,7,8]. The above research did not clearly show which types of electron systems in AlGaN/GaN HFETs should be selected to ensure the accuracy of the PCF scattering theory, which is an important issue
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