Simulation of Sublimation Growth of SiC Single Crystals

Abstract

(a) Advanced Technology Center, P.O. Box 29, 194156 St. Petersburg, Russia(b) Fluid Mechanics Department, University of Erlangen-Nurnberg, Cauerstrasse 4,D-91058 Erlangen, Germany(c) A. F. Ioffe Physical-Technical Institute, Russian Academy of Sciences,Polytekhnicheskaya 26, 194021 St. Petersburg, Russia(Received January 31, 1997)Modelling of sublimation growth of SiC is discussed with the goal to describe the mathematicalmodels necessary to optimize the process and design of the growth system. An analysis of the mech-anisms of growth of bulk silicon carbide crystals is performed. Growth conditions which providestable growth of single SiC crystals without formation of secondary phases are considered. Thephase diagram of the formation of extra phases during the sublimation growth of SiC is presented.Modelling of the growth of bulk SiC crystals is considered. Results of modelling the temperaturedistribution inside the inductively heated system for the growth of bulk SiC crystals are shown. Amechanism of material transport inside the closed Ta container in the absence of an inert gas atmo-sphere is proposed which is different from that of diffusive or free-molecular transport. First resultsof the model analysis of chemical processes inside the volume of SiC powder during the sublimationgrowth are demonstrated. It is shown that the sublimation and re-crystallization of the SiC sourceis sensitive to the temperature distribution in the source.