Abstract
Modelling of sublimation growth of SiC is discussed with the goal to describe the mathematical models necessary to optimize the process and design of the growth system. An analysis of the mechanisms of growth of bulk silicon carbide crystals is performed. Growth conditions which provide stable growth of single SiC crystals without formation of secondary phases are considered. The phase diagram of the formation of extra phases during the sublimation growth of SiC is presented. Modelling of the growth of bulk SiC crystals is considered. Results of modelling the temperature distribution inside the inductively heated system for the growth of bulk SiC crystals are shown. A mechanism of material transport inside the closed Ta container in the absence of an inert gas atmosphere is proposed which is different from that of diffusive or free-molecular transport. First results of the model analysis of chemical processes inside the volume of SiC powder during the sublimation growth are demonstrated. It is shown that the sublimation and re-crystallization of the SiC source is sensitive to the temperature distribution in the source.
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