Abstract
A ridge-type semiconductor laser with selectively proton-implanted cladding layers is proposed, and lasing characteristics are simulated. In this laser, horizontal transverse modes are confined by the ridge structure; carrier distributions are controlled by selectively proton-implanted cladding layers. It is found that the kink level is higher and the threshold current is lower than those of ridge-type semiconductor lasers with optical antiguiding layers for horizontal transverse modes. In addition, the dependences of kink level and threshold current on the space between the proton-implanted regions (S) are analyzed, and S is optimized. Horizontal and vertical near field patterns are almost independent of S; this result indicates that the light and carriers are confined separately.
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