Abstract
A ridge-type semiconductor laser with selectively proton-implanted cladding layers for separate confinement of horizontal transverse modes and carriers is proposed, and lasing characteristics are simulated. Light is confined by the proton-implanted n-cladding layer; carriers are confined by the proton-implanted p-cladding layer. It is found that light output operating in the fundamental transverse mode is enhanced and threshold current is decreased.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
