Abstract
In this paper, the Monte Carlo method and numerical model are used to build the electrical model of a SiC-based betavoltaic microbattery using a 3H source, and the influences of structural parameters and the surface recombination effect on the output characteristics of the SiC PN battery are simulated. According to Monte Carlo calculations based on the energy spectrum of the 3H source, the ionization energy deposition approaches the exponential distribution along the depth direction, and most of the 22rs are concentrated near the material surface. The ionization energy deposition data is converted into non-equilibrium carrier information for the numerical simulation of the battery’s output characteristics. The simulation results show that the conversion efficiency of the battery rises first, and then decreases with the increase of the doping concentration of the N region. This is because the N region-doping affects the depletion region width and the built-in electrical potential at the same time. After considering the surface recombination effect, the conversion efficiency decreased significantly. Thinning the thickness of or moderately reducing the doping concentration of the P region will weaken the surface recombination effect.
Highlights
The betavoltaic microbattery is a semiconductor device that utilizes the radiation-voltaic effect of charged particles emitted by radioisotopes to output electric energy
Taking into account various factors such as the self-absorption effect of radioisotope sources, the irradiation damage of energy converters and the collection efficiency of ionization energy, low-activity and low-energy β radioisotope sources are mostly taken as energy sources by betavoltaic microbatteries [1,2,3,4], such as 3 H, 63 Ni, 33 P, 147 Pm and so on
The ionization energy deposition obtained by the Monte Carlo calculation is converted into the generation rate of electron-hole pairs and mapped to the device grid generated by numerical simulation software, and the radiation-voltaic effect of the device can be simulated
Summary
The betavoltaic microbattery is a semiconductor device that utilizes the radiation-voltaic effect of charged particles emitted by radioisotopes to output electric energy. Taking into account various factors such as the self-absorption effect of radioisotope sources, the irradiation damage of energy converters and the collection efficiency of ionization energy, low-activity and low-energy β radioisotope sources are mostly taken as energy sources by betavoltaic microbatteries [1,2,3,4], such as 3 H, 63 Ni, 33 P, 147 Pm and so on. 3 H has a long half-life (12.3 years) and a high specific activity. It is available and inexpensive, and is considered one of the ideal energy sources for betavoltaic microbatteries. The performance is more affected by the surface structure and the surface recombination effect of the energy converter
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