Abstract
The step bunching processes on GaAs (001) vicinal surfaces grown by metalorganic vapor phase epitaxy (MOVPE) are investigated by experiment and the simulation method. In the early stage of the growth, the step bunching height and the terrace widths increase linearly and saturate with increasing layer thickness. The step bunching height and the terrace widths are estimated by the Monte Carlo simulation. From the fitting of the simulated step bunching process to that process of the experiment, the activation energy of the up-side and down-side step sites compared with that of the terrace sites are obtained. Furthermore, the terrace width saturation mechanism is clarified.
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