Abstract
AbstractWe observe the atomic structures at the multilayer step region on MOVPE-grown GaAs (001) vicinal surface using ultra high vacuum scanning tunneling microscopy (UHV-STM), and clarify that (4×2) or (4×3) like reconstruction units are dominant. Oxide free AlAs surfaces grown on GaAs vicinal surface are also successfully observed by UHV-STM. The reconstruction units at the multilayer step region on AlAs surface have the same units on GaAs vicinal surface. GaAs surface has the lack of dimmer rows on the terrace region just below the multilayer step region, while AlAs surface has dimmer rows even on the terrace just below the multilayer step region. GaAs layer growth leads tothe step bunching phenomenon and AlAs surface leads to the step debunching phenomenon.
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