Abstract
This paper presents the comparative study on linearity and analog/radio frequency presentation of an III–V staggered hetero-junction nanowire (NW) TFET with Si and InAs based NW TFET of same dimension. The device parameter of analog/RF performance for low power application such as transconductance (gm), output resistance (RO), intrinsic gain (gmR0), cut-off frequency (fT), maximum frequency of oscillation (fmax), gain bandwidth product (GBW), VIP2, VIP3 as well as 1-dB compression point has been explored. There is a better improvement in analog/radio frequency presentation obtained from heterojunction NW TFET over Si and InAs TFET. The result reveals that heterojunction TFET provides superior intrinsic gain, higher cutoff frequency, higher GBW better linearity performance as compared to Si and InAs TFET.
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