Abstract
In this paper, the analog/radio frequency and linearity performance of staggered heterojunction nanowire tunnel FET is studied and compared with Si and InAs based NW TFET of same dimension. Different analog/RadioFrequency and linearity parameters like transconductance (gm), intrinsic gain (gmR0), cut-off frequency (fT), as well as 1-dB compression point has been studied. There is a better enhancement in the analog/RF performance obtained from heterojunction NW TFET over Si and InAs TFET. To improve ION and subthreshold swing, a considerable advance in the analog/RadioFrequency performance parameters obtain by the HETJ Nanowire TFET in comparision to Si and InAs Nanowire tunnel FET for use in analog/mixed signal low power applications is reported. The result reveals that heterojunction TFET provides superior intrinsic gain, higher cutoff frequency, better linearity performance as compared to Si and InAs TFET.
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