Simplified Model of the Effect of Source/Drain Doping Gradient on Capacitance and Resistance in a Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

Abstract

Simplified models of capacitance and resistance in the external region are presented and the mobility enhancement effect is verified for extremely scaled and undoped double-gate metal–oxide–semiconductor field-effect transistors (MOSFETs) with the raised source/drain and self-aligned silicide structure and different source/drain doping gradients. The accuracy and universality of these models were confirmed using a two-dimensional simulator. Results indicated that a 3 nm increment of the source/drain lateral doping straggle can reduce the intrinsic delay by about 30% and the leakage current by about 95%.