Abstract
The source-drain current-voltage characteristic is linear and symmetric at low voltages.The linearity and symmetry can be influenced by the electric potential of a gate electrode. Becausethe process is sensitive to the type of semiconductor, the method – “modified field effect transistormethod” – can be used for the determination of the type of majority charge carriers. No insulatinglayer between the source-drain and gate electrodes is used. The effect is demonstrated on P- and Ntypeorganic semiconductors, 6-bis[5-(benzofuran-2-yl)-thiofen-2-yl]-2,5-bis(2-ethylhexyl)pyrrolo[3,4-c]pyrrole-1,4-dione [DPP(TBFu)2] and phenyl-C61-butyric acid methyl ester [PCBM],respectively.
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