Multiphoton absorption by charge carriers in semiconductors in a magnetic field

Abstract

AbstractA theory of absorption of strong electromagnetic radiation by charge carriers in semiconductors in a static uniform magnetic field is developed. By using the density matrix method in path‐integral representation the multiphonon absorption coefficient in semiconductors is calculated at arbitrary temperatures for different scattering mechanisms such as ionized impurities, polar and nonpolar interactions with optical phonons, and deformation and piezoelectric interactions with acoustical phonons. The coefficients of magnetic non‐linearity in weak magnetic fields are studied. The structure of the absorption spectrum in an arbitrary magnetic field is investigated, the existence of multiphoton absorption resonances revealed and the dependence of their parameters on the order of resonance and on the conditions of absorption is obtained. The asymptotic properties of the absorption coefficient in a strong magnetic field are analyzed. The anisotropy of absorption due to a magnetic field is discussed in each case.