Abstract
Encapsulated silicon thin films were both zone heated and uniformly pulse heated over a range of rates and temperatures with quartz–iodine lamp heat sources. Large 100-μ size grains were observed after zone heating in the solid state just below the melting point. In contrast, 10-μ grain sizes were found in comparable pulse heat treatments in the same material. Zone melting results in a columnar subgrain structure. The mechanisms of grain growth, crystal growth from the liquid film and agglomeration are discussed in view of these experiments at relatively low growth rates. A silicon-on-insulator material may be produced at rates less than 0.025 cm/s by directional grain growth.
Published Version
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