Abstract

The photovoltaic characterization of silicon thin film solar cells with nano-scale spatial resolution is demonstrated by a new characterization method developed using a scanning microscope. In the surface topography of p-i-n type amorphous silicon thin film solar cells, large and small convex grains corresponding to the textured surface of an Asahi U-type substrate and the crystalline grains in the n-type microcrystalline silicon layer are found. In the local photo-current image, distribution in local photo-current correlated with the structure of the n-type microcrystalline silicon layer is observed in the p-i-n type amorphous silicon (a-Si:H) thin film solar cells. The local surface potential in amorphous silicon thin film solar cells with light irradiation is also evaluated. In the local surface potential image of the p-i-n a-Si:H thin film solar cells without light irradiation, the local surface potential on the large convex grains found in the surface topography is smaller than that in the concave region between the large convex grains. Similar distribution of the local surface potential is observed in the local surface potential images with light irradiation. The local surface potential difference between the large convex grains and the concave region decreases with increasing power of the irradiation light.

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