Year-end Sale % OFF 
Abstract
A silicon single-electron memory showing clear hysteresis at 4.2K is demonstrated. The memory structure consists of three integrated silicon nanowires. The capability of the memory to read, write and erase electrons from the storage node is shown. The CMOS-compatible fabrication process allows for future integration of these devices with CMOS technology.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
