Silicon self-interstitial supersaturation during phosphorus diffusion

Abstract

The effect of phosphorus introduction and diffusion on the diffusivities of boron, arsenic, and antimony in silicon was studied using arsenic and antimony buried layers in a boron-doped silicon substrate. It was found that the diffusivity of boron and arsenic was enhanced, while that of antimony was retarded directly under the silicon surface exposed to phosphorus. Since antimony diffuses primarily via a vacancy mechanism while the other two elements via a combination of vacancy and interstitialcy mechanisms, these results suggest that phosphorus predeposition enhances the silicon self-interstitial concentration and reduces the concentration of vacancies.