Abstract
The diffusion of boron, phosphorus, and arsenic in layers of CoSi2 has been investigated. In order to limit effects due to interfaces and grain boundaries, the layers used were extremely thick, ∼900 nm. The dopants were introduced via implantation to a depth of ∼70 nm. Values of the activation energy for the lattice diffusion of both boron and phosphorus were obtained. In contrast to these two elements arsenic was found to be almost totally immobile. Some implications of these results for practical applications are briefly discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
