Abstract
No silicon-based light emitting diodes exist for shortwave infrared (1.6–3.0 μm) band due to bandgap limitations imposed on luminescence wavelengths. To alleviate this problem, we propose a photonic device in which below-bandgap radiation comes as the result of the thermal emission enhanced by free charge carriers generated by the above-bandgap excitation (light downconversion). With this approach, we demonstrate high-temperature (T>300 K) large-area (20×20 mm2) Si emitter with stable high-power output (∼100 mW/cm2) and prescribed spectrum inside the 1.6–3 μm band for applications such as dynamic scene simulation devices operating at frequencies above 1 kHz.
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