Silicon Dioxide Thin Films Prepared from Silicon Tetraacetate Using ArF Excimer Laser by Chemical Vapor Deposition

Abstract

Silicon dioxide thin films were prepared from silicon tetraacetate by low-pressure direct photochemical vapor deposition (photo-CVD) using an ArF excimer laser. The film prepared by vertical irradiation of an unheated substrate using a laser showed the lowest relative dielectric constant which is comparable to that of the film prepared by thermal-CVD at the substrate temperature of 300°C. The relative dielectric constant was approximately proportional to the absorbance of Si–O· and Si–OH bond at about 950 cm-1, indicating that ionic polarization due to the nonbridging oxygen was closely related to the relative dielectric constant of film prepared by decomposition of silicon tetraacetate at a low substrate temperature. Low-temperature annealing in air decreased the amount of nonbridging oxygen and resulted in a denser film.