Effect of Alcohol-Assisted Annealing on the Quality of Silicon Oxide Thin Film

Abstract

Silicon oxide thin films have been formed by use of the reaction between spin-coated silicone oil and ozone gas at atmospheric pressure and low temperature (250°C). Films formed at this temperature contained Si–OH bonds, owing to inadequate dehydration. To remove the Si–OH bonds at low temperature, the sample was dipped in ethanol at room temperature for 15 min then annealed on a hot plate at 250°C in methanol gas for 30 min. This treatment effectively dissociated the Si–OH bonds. It is believed the Si–OH bonds are replaced by Si-OCH3 bonds during the alcohol-assisted annealing. The leakage current of the metal-oxide-semiconductor after alcohol-assisted annealing was improved and the hysteresis width was reduced. This indicated that the number of trap sites owing to Si–OH bonds was reduced.