A fast algorithm for the calculation of junction capacitance and its application for impurity profile determination : H. J. J. De Man. Solid St. Electron.15 (1972), p. 177

Abstract

Silicon dioxide thin films were prepared from silicon tetraacetate by low-pressure direct photochemical vapor deposition (photo-CVD) using an ArF excimer laser. The film prepared by a vertical irradiation of laser to an unheated substrate showed the lowest relative dielectric constant which is comparable to that of the film prepared by thermal-CVD at a substrate temperature of 300 °C. The relative dielectric constant was approximately proportional to the absorbance of Si-O · bond at about 950 cm−1. This indicates that an ionic polarization due to the nonbridging oxygen is closely connected with the relative dielectric constant of the film prepared by the decomposition of silicon tetraacetate at a low substrate temperature. Low-temperature annealing in air decreased the dangling bond and made the film denser.