Abstract
In this paper, High Power Double Surrounding Gate(DSG) MOSFET with 4H-SiC as material has been studied. Also, the RF performance of DSG MOSFET has been investigated for various channel length and the results so obtained are compared with the conventional Surrounding Gate(SG) MOSFET, using ATLAS 3D device simulator. From the analysis, it is shown that cylindrical Double Surrounding Gate(DSG) MOSFET exhibits superior power and analog performance than conventional cylindrical Surrounding Gate(SG) MOSFET. DSG MOSFET has a number of desirable features, such as higher transducer power gain, better current gain, high on-state current, improved transconductance g m , high unity-gain frequency f T . The improvement is due to formation of two conducting paths because of the presence of two gates. Power has further been improved because Silicon Carbide has been used as material instead of Silicon.
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