Abstract
We report on a multiple-state switching behavior in the tip heightor tunneling current of scanning tunneling microscopy on the Si(111)-7 × 7 surface. This switching is caused by displacement of silicon adatoms under the influence ofenergetic tunneling electrons. When the tip is fixed over a center adatom, five well-definedlevels appear in the measured tip height and tunneling current. These levels are attributedto different electronic structures, depending on the configuration of the center adatoms inthe unit cell. We also demonstrate manipulations of the center adatoms by controlling thesample bias.
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