Abstract
In this work we present a novel trap spectroscopy based on stress induced leakage current measurements for constant voltage stress and substrate hot carrier injection stresses in nMOSFET devices. Peaks in the stress induced leakage current at several gate voltages are attributed specifically to defects in the bulk and at the interface by using the substrate hot electron injection technique to specifically create defects in different spatial locations. Our results show that low energy carriers preferentially creates defects which are deep in the bandgap but close to the interface, while injection into the HfSiON conduction band creates bulk defects approximately aligned with the Si conduction band.
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