Signatures of distinct structures related to rod‐like defects in silicon detected by various measurement methods

Abstract

AbstractSilicon samples containing rod‐like defects (RLD) and pre‐characterized by the electric‐dipole spin resonance (EDSR) method were investigated by photoluminescence (PL) and deep level transient spectroscopy (DLTS) methods. Employing previously reported strict correlation between the EDSR signatures of various RLD structures and their structural models developed from microscopy (TEM) investigations it became possible to associate PL and DLTS features with these defects. The results suggest that at low measurement temperatures, i.e. at 10 K, sharp PL emission peak detected at 1405 nm is related to line‐interstitial defects (LID), that detected at 1372 nm to plane defects (PD) and two peaks detected at 1426 nm and 1515 nm to dislocation dipoles (DD). Two energy bands related to LIDs are positioned at 0.2 eV and 0.25 eV from the conduction band of Si. Band‐like stated associated with PD are positioned at ∼0.5 eV and those related to DDs at 0.32–0.36 eV below the conduction band. Properties of DLTS signatures and temperature dependencies for the PL peaks are reported. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)