Abstract
The atomic structure of large agglomerates of interstitials in silicon crystals, i.e. rod-like defects (RLD), was extensively investigated previously using transmission electron microscopy (TEM) methods. Much less is known about electronic properties of these defects. The electric-dipole spin resonance (EDSR) signals and photoluminescence (PL) spectra from Si samples with RLDs allow investigation of electronic properties and formation-evolution peculiarities of these defects. Obtained results clearly show qualitative evolution of the EDSR signals from RLDs with annealing time. Namely, new signals with modified symmetry are formed upon annealing and that detected at earlier stages of annealing – disappear. Comparison of the EDSR results with published TEM data allows determination of atomic structures related to distinct EDSR signals. Correlations of the EDSR signals and peculiarities in the PL spectra for the similar samples are reported. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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