Abstract
The correlation deep level transient spectroscopy (DLTS) method is developed for insulator/semiconductor interface studies. Trap transient modeling indicates that the energy range in which the trap transients can contribute to the DLTS signals of the correlation method is about 12 kT, and is much wider than that of the boxcar method (several kT). Moreover, large voltage pulse for saturation will cause the capacitance transient to shift away from the ideal exponential due to the sum of the various emission rates. Hence, the equations for determination of interface trap density suitable for the boxcar method is invalid for the correlation method. For this reason, an equation for determining the interface trap density suitable for the correlation method is derived. The interface trap density determined by this method agrees well with other methods.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
